Etcher | MEMS & Microfluidics Etcher

Key Advantages

Built for high-aspect-ratio microstructure processing, it leverages mature ICP technology to achieve exceptional sidewall verticality control and eliminates etching undercut. Precise Bosch process gas switching, combined with a low-temperature electrostatic chuck, ensures high etch rates while effectively preventing photoresist burning and wafer thermal damage. Whether processing standard silicon or hard materials like silicon carbide, it delivers stable process support, perfectly meeting the high-precision volume production demands for MEMS and TSV advanced packaging.

Working Principle

The equipment operates under high vacuum, cycling the process at millisecond intervals. First, C4F8 gas is introduced to deposit a polymer protective film on the substrate surface. Then, it switches to SF6 gas, where generated fluorine radicals bombard vertically downward under bias voltage, removing the bottom protective film and etching the material. As a high-performance Bosch Process Etcher, the sidewalls are continuously protected by the polymer, allowing etching to proceed only vertically. This creates microstructures with extremely high aspect ratios and smooth sidewalls.

Application Fields

1.MEMS sensor fabrication: etching accelerometers and gyroscope microstructures.
2.Advanced packaging (TSV): acting as professional TSV Etching Equipment to process high-density through-silicon vias.
3.Power device manufacturing: achieving precise SiC Trench Formation to improve device performance.
4.Microfluidic chips: processing high-precision silicon-based microchannel molds.

FAQ

Q1: What is the maximum aspect ratio your equipment can achieve? How about the sidewall verticality?

A: Relying on precise gas switching and bias control, our Deep Silicon Etching System easily achieves aspect ratios of 10:1 or higher. The sidewall verticality is strictly controlled within 90°±1°, completely eliminating "V-shaped" etching and perfectly meeting the stringent requirements of high-end MEMS.

Q2: If I need to etch hard materials like silicon carbide (SiC), does the equipment require special modifications?

A: No major modifications are needed, but a high-power RF generator and corrosion-resistant chamber components are recommended. Our system is optimized for third-generation semiconductor materials, offering higher etch rates and better mask selectivity to ensure smooth SiC trench edges.

Q3: How do you prevent the wafer from overheating and damaging the photoresist during etching?

A: The equipment features a low-temperature Electrostatic Chuck (ESC) and introduces helium gas to the wafer backside for highly efficient cooling. Even under prolonged high-intensity plasma bombardment, the wafer temperature is kept safely stable, effectively preventing the photoresist from burning.

Technical Specifications