High-Temperature Ion Implanter | Wafer Temperature Control & Deep Junction Formation

Working Principle

The equipment generates a high-energy ion beam within a vacuum chamber and scans the wafer. During implantation, a built-in heating system works in tandem with backside cooling to achieve strict Wafer Temperature Control. By maintaining the wafer at an elevated temperature, defects caused by ion bombardment are repaired in real time, avoiding the surface damage typical of standard room-temperature implantation. Combined with precise beam regulation, the system achieves flawless Deep Junction Formation in thick films, meeting the electrical demands of high-end devices.

Application Fields

1.SiC power devices: for high-voltage MOSFETs in EVs and industrial power supplies.RF and microwave devices: improving conductivity in materials like GaN, ideal for Compound

2.Semiconductor Fabrication.

3.Advanced logic chips: precise ion doping for threshold voltage adjustment.

4.Photodetectors: forming high-concentration doped regions to enhance conversion efficiency.

FAQ

Q1: Why is High-Temperature SiC Implantation essential in SiC device manufacturing?

A: Silicon carbide is extremely hard, and room-temperature implantation causes severe lattice damage that is hard to activate later. High-temperature implantation allows dynamic lattice repair during the process, significantly reducing defect density.

Q2: How does the equipment ensure Beam Current Uniformity during the implantation process?

A: The equipment is equipped with a high-precision electrostatic scanning system and Faraday cup monitoring feedback. By tracking the ion beam distribution in real time, it automatically adjusts the scanning voltage to ensure absolute dose consistency across the wafer.

Q3: Will high-temperature heating affect the structures on the backside of the wafer?

A: No. The equipment uses localized rapid heating, and the wafer backside has an independent cooling system. Heat is strictly confined to the wafer surface, so backside structures won't deform or carbonize, ensuring process cleanliness.

Technical Specifications