Sub-Nanometer Thin Film Deposition System | Gate Dielectric | Self-Limiting Surface Reactions

Key Advantages

The self-limiting surface reaction mechanism pushes film thickness control down to the sub-nanometer level, ensuring every deposited layer is highly uniform and dense. For complex 3D blind holes and high-aspect-ratio trenches, it delivers flawless conformal coverage, completely eliminating the "thick on top, thin on the bottom" issues of traditional processes. Highly compatible with various precursor materials, it easily meets the stringent fabrication requirements for high-k gate dielectrics in advanced logic chips and 3D NAND memory.

Working Principle

The process works by alternately pulsing two different precursor gases into the reaction chamber. When a gas pulse enters, Self-Limiting Surface Reactions occur on the substrate—meaning the molecules automatically stop adsorbing once a single layer is complete. A purge gas then clears out the excess, followed by a second precursor to react and form the target film. This cyclic process enables extremely precise Sub-Nanometer Thickness Control, ensuring every layer grows uniformly and densely.

Application Fields

1.Advanced logic chips: achieving precise Gate Dielectric Deposition to reduce leakage.
2.3D memory devices: forming perfect Conformal Thin Film Coating in deep holes.
3.Advanced packaging (TSV): using Sub-Nanometer Thickness Control for uniform insulation layers.
4.Optics and flexible electronics: low-temperature film formation on flexible substrates for high density.

FAQ

Q1: What is the biggest advantage of your Atomic Layer Deposition Equipment compared to standard CVD or PVD?

A: The main difference is the "self-limiting" characteristic. Standard CVD or PVD often suffer from "thick on top, thin at the bottom" step coverage issues inside deep holes. Our equipment relies on Self-Limiting Surface Reactions, guaranteeing absolutely consistent film thickness everywhere, no matter how complex the structure, achieving precise atomic-level control.

Q2: Can the equipment meet the coating requirements for high-aspect-ratio 3D structures?

A: Absolutely. That's our core technical advantage. By precisely controlling precursor pulse times and chamber vacuum, the system achieves 100% Conformal Thin Film Coating in high-aspect-ratio blind holes or trenches, ensuring the consistency of device electrical performance.

Q3: Are the consumable costs high during operation

A: Even though we pursue extreme Sub-Nanometer Thickness Control, our precursor utilization rate is exceptionally high. Because the reaction is self-limiting, it stops once surface adsorption is saturated, preventing precursor waste. Overall, the consumable costs are very well controlled.

Technical Specifications